Piezoelectric coefficients of aluminum nitride and gallium nitride
Conference
·
OSTI ID:20104740
Aluminum nitride (AlN) and gallium nitride (GaN) thin films have potential uses in high temperature, high frequency (e.g. microwave) acoustic devices. In this work, the piezoelectric coefficients of wurtzite AlN and GaN/AlN composite film grown on silicon substrates by molecular beam epitaxy were measured by a Mach-Zehnder type heterodyne interferometer. The effects of the substrate on the measured coefficients are discussed.
- Research Organization:
- Hong Kong Polytechnic Univ., Kowloon (HK)
- OSTI ID:
- 20104740
- Country of Publication:
- United States
- Language:
- English
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