Low-temperature growth of gallium nitride films by inductively coupled-plasma-enhanced reactive magnetron sputtering

Journal Article · Thu May 15 04:00:00 EDT 2014 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

DOI:https://doi.org/10.1116/1.4871472· OSTI ID:22258555

Ni, Chih-Jui

Gallium nitride (GaN) films were grown on sapphire substrate by reactive magnetron sputtering. Inductively coupled-plasma (ICP) source was installed between the substrate holder and the sputtering target to increase the plasma density and the degree of ionization of nitrogen gas. Liquid Ga and Ar/N{sub 2} were used as the sputtering target and sputtering gases, respectively. X-ray diffraction measurements confirmed that the authors could grow high quality GaN crystallites at 500 °C. However, the crystalline GaN (0002) peak remained even by lowering the growth temperature down to 300 °C. The N:Ga ratio of the film grown at 500 °C was almost 1:1, and the nitrogen composition became higher toward the 1:1 N:Ga ratio with increasing the growth temperature. The high degree of ionization induced by ICP source was essential to the growth of high crystalline quality GaN films.

• OSTI ID: 22258555
• Journal Information: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films Journal Issue: 3 Vol. 32; ISSN 0734-2101; ISSN JVTAD6
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL GROWTH
FILMS
GALLIUM NITRIDES
GASES
LIQUIDS
MAGNETRONS
NITROGEN
PLASMA DENSITY
SAPPHIRE
SPUTTERING
SUBSTRATES
TEMPERATURE RANGE 0065-0273 K
X-RAY DIFFRACTION