Growth kinetics and structural quality in GaN epitaxy by low pressure MOVPE
- Univ. Montpellier 2 (France)
GaN epilayers have been grown using low pressure MOVPE (76 Torr) onto (0001) sapphire substrates. Triethylgallium (TEGa) and Ammonia (NH{sub 3}) were used as precursors. The growth rate has been determined versus growth parameters. The growth rate versus NH{sub 3} flow displays a rather unusual behavior, in particular at low growth temperature (buffer layer), where the growth rate decreases strongly when the NH{sub 3} flow increases. A growth mechanism involving a competitive adsorption step onto the surface is proposed, and results in a strong dependence of the growth rate on the V/III ratio. The structural quality of the layers has been assessed by X-ray diffraction versus the growth parameters, and will be reported here. A substrate nitridation step, prior to buffer layer deposition has been introduced in the growth process. The effect of substrate nitridation on the structural and optical properties of the epilayers is studied and they propose an optimized pre-treatment for the MOVPE growth of GaN onto (0001) sapphire substrates.
- OSTI ID:
- 394953
- Report Number(s):
- CONF-951155-; ISBN 1-55899-298-7; TRN: IM9648%%30
- Resource Relation:
- Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995; Other Information: PBD: 1996; Related Information: Is Part Of Gallium nitride and related materials; Ponce, F.A. [ed.] [Xerox Palo Alto Research Center, CA (United States)]; Dupuis, R.D. [ed.] [Univ. of Texas, Austin, TX (United States)]; Nakamura, S. [ed.] [Nichia Chemical Industries, Tokushima (Japan)]; Edmond, J.A. [ed.] [Cree Research, Inc., Durham, NC (United States)]; PB: 993 p.; Materials Research Society symposium proceedings, Volume 395
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
GALLIUM NITRIDES
CHEMICAL VAPOR DEPOSITION
CRYSTAL STRUCTURE
OPTICAL PROPERTIES
ELECTRONIC EQUIPMENT
SEMICONDUCTOR MATERIALS
SAPPHIRE
ORGANOMETALLIC COMPOUNDS
AMMONIA
GAS FLOW
NITRIDATION
X-RAY DIFFRACTION
PHOTOLUMINESCENCE
REFLECTIVITY
EXPERIMENTAL DATA