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Title: MOVPE GaN gas phase chemistry for reactor design and optimization

Abstract

The results of gas phase decomposition studies are used to construct a chemistry model which is compared to data obtained from an experimental MOVPE reactor. A flow tube reactor is used to study gas phase reactions between trimethylgallium (TMG) and ammonia at high temperatures, characteristic to the metalorganic vapor phase epitaxy (MOVPE) of GaN. Experiments were performed to determine the effect of the mixing of the Group III precursors and Group V precursors on the growth rate, growth uniformity and film properties. Growth rates are predicted for simple reaction mechanisms and compared to those obtained experimentally. Quantification of the loss of reacting species due to oligomerization is made based on experimentally observed growth rates. The model is used to obtain trends in growth rate and uniformity with the purpose of moving towards better operating conditions.

Authors:
; ;  [1]; ; ;  [2]
  1. Univ. of Wisconsin, Madison, WI (United States). Dept. of Chemical Engineering
  2. Epitronics, Danbury, CT (United States)
Publication Date:
Sponsoring Org.:
National Science Foundation, Washington, DC (United States); Advanced Research Projects Agency, Washington, DC (United States)
OSTI Identifier:
580975
Report Number(s):
CONF-961202-
ISBN 1-55899-353-3; TRN: IM9807%%118
Resource Type:
Book
Resource Relation:
Conference: 1996 Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 2-6 Dec 1996; Other Information: PBD: 1997; Related Information: Is Part Of III-V nitrides; Ponce, F.A. [ed.] [Xerox Palo Alto Research Center, CA (United States)]; Moustakas, T.D. [ed.] [Boston Univ., MA (United States)]; Akasaki, I. [ed.] [Meijo Univ., Nagoya (Japan)]; Monemar, B.A. [ed.] [Linkoeping Univ. (Sweden)]; PB: 1278 p.; Materials Research Society symposium proceedings, Volume 449
Country of Publication:
United States
Language:
English
Subject:
32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION; 36 MATERIALS SCIENCE; CHEMICAL REACTORS; VAPOR PHASE EPITAXY; GALLIUM NITRIDES; EXPERIMENTAL DATA; CRYSTAL GROWTH; OPERATION; PERFORMANCE; CHEMICAL REACTIONS

Citation Formats

Safvi, S.A., Thon, A., Kuech, T.F., Redwing, J.M., Flynn, J.S., and Tischler, M.A. MOVPE GaN gas phase chemistry for reactor design and optimization. United States: N. p., 1997. Web.
Safvi, S.A., Thon, A., Kuech, T.F., Redwing, J.M., Flynn, J.S., & Tischler, M.A. MOVPE GaN gas phase chemistry for reactor design and optimization. United States.
Safvi, S.A., Thon, A., Kuech, T.F., Redwing, J.M., Flynn, J.S., and Tischler, M.A. 1997. "MOVPE GaN gas phase chemistry for reactor design and optimization". United States. doi:.
@article{osti_580975,
title = {MOVPE GaN gas phase chemistry for reactor design and optimization},
author = {Safvi, S.A. and Thon, A. and Kuech, T.F. and Redwing, J.M. and Flynn, J.S. and Tischler, M.A.},
abstractNote = {The results of gas phase decomposition studies are used to construct a chemistry model which is compared to data obtained from an experimental MOVPE reactor. A flow tube reactor is used to study gas phase reactions between trimethylgallium (TMG) and ammonia at high temperatures, characteristic to the metalorganic vapor phase epitaxy (MOVPE) of GaN. Experiments were performed to determine the effect of the mixing of the Group III precursors and Group V precursors on the growth rate, growth uniformity and film properties. Growth rates are predicted for simple reaction mechanisms and compared to those obtained experimentally. Quantification of the loss of reacting species due to oligomerization is made based on experimentally observed growth rates. The model is used to obtain trends in growth rate and uniformity with the purpose of moving towards better operating conditions.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = 1997,
month =
}

Book:
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