Hysteresis relaxation in (Pb,La)(Zr,Ti)O{sub 3} thin film capacitors with (La,Sr)CoO{sub 3} electrodes
- Department of Materials and Nuclear Engineering and Center for Superconductivity Research, University of Maryland, College Park, Maryland 20742 (United States)
- Sandia National Laboratories, Albuquerque, New Mexico 87185-1349 (United States)
- Radiant Technologies Inc., Albuquerque, New Mexico 87106 (United States)
We report on the thermally activated hysteresis relaxation effects in (La,Sr)CoO{sub 3}/ (Pb,La)(Zr,Ti)O{sub 3}/(La,Sr)CoO{sub 3} thin film ferroelectric capacitors. Films cooled in oxygen deficient ambients exhibit a marked voltage offset in the hysteresis loops. Upon the application of a dc bias voltage or unidirectional pulses of the same polarity as the offset, the loops become more symmetric. Subsequently, holding the capacitors in the original preferred polarization state leads to a relaxation of the hysteresis loop towards its original voltage offset condition. The relaxation process is described by a stretched exponential and is thermally activated. {copyright} {ital 1996 American Institute of Physics.}
- Research Organization:
- Sandia National Laboratory
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 388142
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 17 Vol. 69; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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