Hysteresis relaxation in (Pb,La)(Zr,Ti)O{sub 3} thin film capacitors with (La,Sr)CoO{sub 3} electrodes

Journal Article · Tue Oct 01 00:00:00 EDT 1996 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.117732· OSTI ID:388142

Aggarwal, S; Dhote, A M; Ramesh, R ^[1]; Warren, W L; Pike, G E; Dimos, D; Raymond, M V; Tuttle, B A ^[2]; Evans, Jr, J T ^[3]

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1. Department of Materials and Nuclear Engineering and Center for Superconductivity Research, University of Maryland, College Park, Maryland 20742 (United States)
2. Sandia National Laboratories, Albuquerque, New Mexico 87185-1349 (United States)
3. Radiant Technologies Inc., Albuquerque, New Mexico 87106 (United States)

We report on the thermally activated hysteresis relaxation effects in (La,Sr)CoO{sub 3}/ (Pb,La)(Zr,Ti)O{sub 3}/(La,Sr)CoO{sub 3} thin film ferroelectric capacitors. Films cooled in oxygen deficient ambients exhibit a marked voltage offset in the hysteresis loops. Upon the application of a dc bias voltage or unidirectional pulses of the same polarity as the offset, the loops become more symmetric. Subsequently, holding the capacitors in the original preferred polarization state leads to a relaxation of the hysteresis loop towards its original voltage offset condition. The relaxation process is described by a stretched exponential and is thermally activated. {copyright} {ital 1996 American Institute of Physics.}

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 388142
• Journal Information: Applied Physics Letters, Vol. 69, Issue 17; Other Information: PBD: Oct 1996
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
PZT
CAPACITORS
LEAD OXIDES
THIN FILMS
FERROELECTRIC MATERIALS
HYSTERESIS
POLARIZATION
RELAXATION
ELECTRODES