Imprint and oxygen deficiency in (Pb,La)(Zr,Ti)O[sub 3] thin-film capacitors with La-Sr-Co-O electrodes

Journal Article · Mon Mar 13 04:00:00 EST 1995 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.113234· OSTI ID:6489859

Lee, J; Ramesh, R; Keramidas, V G ^[1]; Warren, W L; Pike, G E ^[2]; Evans, Jr, J T ^[3]

---

1. Bellcore, Red Bank, New Jersey 07701 (United States)
2. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
3. Radiant Technologies Inc., Albuquerque, New Mexico 87106 (United States)

La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O thin-film capacitors have been grown in various oxygen ambients by pulsed laser deposition. As the oxygen ambient became more reducing, the capacitors developed more voltage asymmetry in hysteresis loops and a more preferred polarization state directed towards the top electrode. PLZT capacitors cooled in a fully oxidizing atmosphere (i.e., 1 atm oxygen pressure) exhibited nominally symmetric hysteresis loops and also showed little imprint both with and without fully saturating bias fields. We find that ambient oxygen pressure is an important process parameter and the imprint behavior is closely related with ambient oxygen induced effects such as oxygen vacancies, its related defect-dipole complexes and trapping of free charges. The different imprint behavior under negative and positive bias also suggests that the dipolar-defect complexes tend to cause imprint in PLZT capacitors.

• DOE Contract Number: AC04-94AL85000
• OSTI ID: 6489859
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 66:11; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360204 -- Ceramics
Cermets
& Refractories-- Physical Properties
42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
CAPACITORS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
EQUIPMENT
FERROELECTRIC MATERIALS
FILMS
HYSTERESIS
JUNCTIONS
LANTHANUM COMPOUNDS
LEAD COMPOUNDS
MEMORY DEVICES
MIM JUNCTIONS
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
RARE EARTH COMPOUNDS
SEMICONDUCTOR JUNCTIONS
THIN FILMS
TITANATES
TITANIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
ZIRCONATES
ZIRCONIUM COMPOUNDS