Vacancy formation in (Pb,La)(Zr,Ti)O{sub 3} capacitors with oxygen deficiency and the effect on voltage offset

Journal Article · Mon Jul 03 04:00:00 EDT 2000 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.126898· OSTI ID:20216995

Friessnegg, T ^[1]; Aggarwal, S ^[1]; Ramesh, R ^[1]; Nielsen, B ^[2]; Poindexter, E H ^[3]; Keeble, D J ^[4]

---

1. Department of Materials and Nuclear Engineering, University of Maryland, College Park, Maryland 20742 (United States)
2. Division of Materials Science, Brookhaven National Laboratory, Upton, New York 11793 (United States)
3. Army Research Laboratory, Adelphi, Maryland 20783 (United States)
4. Centre for Materials Research, University of Dundee, Dundee DD14HN, Scotland (United Kingdom)

Vacancy-related defect profiles have been measured for La{sub 0.5}Sr{sub 0.5}CoO{sub 3}/(Pb{sub 0.9}La{sub 0.1})(Zr{sub 0.2}Ti{sub 0.8})O{sub 3}/La{sub 0.5}Sr{sub 0.5}= CoO{sub 3} ferroelectric capacitors using a variable-energy positron beam. By varying the layer thickness and the postgrowth processing in a reducing ambient, a capacitor showing oxygen deficiency dominantly in the top electrode and one with deficiency in both electrodes were produced. The capacitor with an asymmetric defect profile showed a voltage offset polarization-voltage hysteresis loop, that with a symmetric distribution of vacancy-related defects showed no offset. These results are discussed in the context of current models for imprint. (c) 2000 American Institute of Physics.

• OSTI ID: 20216995
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 1 Vol. 77; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CAPACITORS
COBALT OXIDES
CRYSTAL DEFECTS
EXPERIMENTAL DATA
FERROELECTRIC MATERIALS
HYSTERESIS
LANTHANUM OXIDES
LEAD OXIDES
MEMORY DEVICES
STRONTIUM OXIDES
THIN FILMS
TITANIUM OXIDES
VACANCIES
ZIRCONIUM OXIDES