Substrate dependence in the growth of epitaxial Pb{sub 1{minus}{ital x}}La{sub {ital x}}TiO{sub 3} thin films
- School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States)
- Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)
The metalorganic chemical vapor deposition (MOCVD) technique has been applied to the growth of epitaxial Pb{sub 1{minus}{ital x}}La{sub {ital x}}TiO{sub 3} (PLT) thin films with {ital x}=0.28. By first introducing an initial TiO{sub 2} layer, three-dimensional epitaxial PLT films were grown on the (100) surface of MgO substrate. For both KTaO{sub 3} (100) and Al{sub 2}O{sub 3} (0001) substrates, heteroepitaxy was achieved without the introduction of TiO{sub 2} as the initial, intervening layer between the PLT film and the substrate. On Al{sub 2}O{sub 3} substrates, PLT films with a [111] preferred orientation were grown with a good epitaxial in-plane relationship. {copyright} {ital 1996 American Institute of Physics.}
- Research Organization:
- Oak Ridge National Laboratory
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 385630
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 15 Vol. 69; ISSN 0003-6951; ISSN APPLAB
- Country of Publication:
- United States
- Language:
- English
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