Optical properties of epitaxial PLT thin films
- Georgia Inst. of Tech., Atlanta, GA (United States). School of Physics
- Oak Ridge National Lab., TN (United States)
- Metricon Corp., Pennington, NJ (United States)
- Clark Atlanta Univ., GA (United States). Dept. of Physics
Metalorganic chemical vapor deposition was used to prepare epitaxial or highly oriented PLT (Pb{sub 1-x}La{sub x}TiO{sub 3}) thin films with x = 0.21-0.34. The growth of PLT films resulted in 3-D epitaxial heterostructures on a (100) surface of both MgO and KTaO{sub 3} substrates. The PLT film grown on a KTaO{sub 3} (100) substrate has a significantly lower minimum channeling yield compared to that grown on the MgO (100) substrate because of the smaller lattice mismatch associated with KTaO{sub 3}. Thickness and refractive indices at 435-1523 nm were measured by prism coupling. Measured film thickness of 570 nm was in good agreement with that obtained from RBS. Refractive index of the PLT film is smaller than that of PbTiO{sub 3}, and its difference at {lambda} = 632.8 nm is about 2.5%. Dispersion of the refractive index was well fitted by a Sellmeier dispersion formula.
- Research Organization:
- Oak Ridge National Lab., TN (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States); Advanced Research Projects Agency, Washington, DC (United States)
- DOE Contract Number:
- AC05-96OR22464
- OSTI ID:
- 215784
- Report Number(s):
- CONF-951155--100; ON: DE96008693
- Country of Publication:
- United States
- Language:
- English
Similar Records
Growth and properties of PbTiO{sub 3}/PLT heterostructures
Substrate dependence in the growth of epitaxial Pb{sub 1{minus}{ital x}}La{sub {ital x}}TiO{sub 3} thin films