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Hrem Study of Heteroeprtaxial Interfaces in the TiO2/Al2O3 System

Conference · · MRS Proceedings
DOI:https://doi.org/10.1557/proc-221-59· OSTI ID:5886635
 [1];  [1];  [1];  [1];  [1]
  1. Argonne National Laboratory (ANL), Argonne, IL (United States)
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TiO2 thin films were grown epitaxially on (1120) sapphire (α-Al2O3) at 800 °C by the MOCVD method. The TiO2 films and TiO2/Al2O3 interfaces were characterized by TEM and HREM. The observations indicate that the TiO2 films are single crystalline and have the rutile structure. A majority of the films has the epitaxial orientation relationship between the TiO2 rutile films (R) and the α-Al2O3 substrates (S): (101)[010]R||(1120)[0001]S, while the epitaxial relationship of (100)[010]R||(1120)[0001]s has also been observed for one film. HREM studies show that the (100) film was grown on an off-cut substrate, vicinal to (1120). Detailed atomic structures of the interfaces will be presented and discussed in terms of the growth mechanism and misfit dislocation structure.

Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE)
DOE Contract Number:
W-31109-ENG-38
OSTI ID:
5886635
Report Number(s):
ANL/CP--71865; CONF-910406--9; ON: DE91012473
Journal Information:
MRS Proceedings, Journal Name: MRS Proceedings Vol. 221; ISSN 1946-4274
Publisher:
Springer Nature
Country of Publication:
United States
Language:
English

References (3)

Fundamental issues in heteroepitaxy—A Department of Energy, Council on Materials Science Panel Report journal April 1990
Molecular-beam epitaxial growth of NiAl on GaAs(001) journal July 1989
Layer by layer growth of FeAl on InP(100) substrates
  • Wowchak, A. M.; Kuznia, J. N.; Cohen, P. I.
  • Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, Vol. 7, Issue 4 https://doi.org/10.1116/1.584635
journal July 1989

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Related Subjects

36 MATERIALS SCIENCE
360201 -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
360202* -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CORUNDUM
CRYSTAL GROWTH
DEPOSITION
ELECTRON MICROSCOPY
FILMS
INTERFACES
MICROSCOPY
MINERALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
SAPPHIRE
SUBSTRATES
SURFACE COATING
THIN FILMS
TITANIUM COMPOUNDS
TITANIUM OXIDES
TRANSITION ELEMENT COMPOUNDS