Electron microscopy study of MOCVD-grown TiO sub 2 thin films and TiO sub 2 /Al sub 2 O sub 3 interfaces

Conference · Thu Nov 01 00:00:00 EST 1990

OSTI ID:6152641

Gao, Y; Merkle, K L; Chang, H L.M.; Zhang, T J; Lam, D J

TiO{sub 2} thin films grown on (11{bar 2}0) sapphire at 800{degree}C by the MOCVD technique have been characterized by transmission electron microscopy. The TiO{sub 2} thin films are single crystalline and have the rutile structure. The epitaxial orientation relationship between the TiO{sub 2} thin films (R) and the substrate (S) has been found to be: (101)(0{bar 1}0){sub R}{parallel}(11{bar 2}0)(0001){sub S}. Growth twins in the films are commonly observed with the twin plane {l brace}101{r brace} and twinning direction {l angle}011{r angle}. Detailed atomic structures of the twin boundaries and TiO{sub 2}/{alpha}-Al{sub 2}O{sub 3} interfaces have been investigated by high-resolution electron microscopy (HREM). When the interfaces are viewed in the direction of (0{bar 1}0){sub R}/(0001){sub S}, the interfaces are found to be structurally coherent in the direction of ({bar 1}01){sub R}/(1{bar 1}00){sub S}, in which the lattice mismatch at the interfaces is about 0.5%. 8 refs., 4 figs.

• Research Organization: Argonne National Lab., IL (USA)
• Sponsoring Organization: DOE/ER
• DOE Contract Number: W-31109-ENG-38
• OSTI ID: 6152641
• Report Number(s): CONF-901105-68; ON: DE91006544
• Resource Relation: Conference: Fall meeting of the Materials Research Society, Boston, MA (USA), 24 Nov - 1 Dec 1990
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
INTERFACES
TITANIUM OXIDES
CHEMICAL VAPOR DEPOSITION
ELECTRON MICROSCOPY
THIN FILMS
ALUMINIUM COMPOUNDS
CHALCOGENIDES
CHEMICAL COATING
DEPOSITION
FILMS
MICROSCOPY
OXIDES
OXYGEN COMPOUNDS
SURFACE COATING
TITANIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
360102* - Metals & Alloys- Structure & Phase Studies
360101 - Metals & Alloys- Preparation & Fabrication