Polarization-sensitive subwavelength antireflection surfaces on a semiconductor for 975nm
- Sandia National Laboratories, Albuquerque, New Mexico 87185-0603 (United States)
We present the results of subwavelength antireflection surfaces etched into GaAs for use at 975nm. These surfaces comprise linear gratings with periods less than the wavelength of light in GaAs. The structure appears as a homogeneous birefringent film. For one of the two polarizations, the film is directly analogous to the well-known quarter-wavelength antireflection coating. For the other polarization there is little effect on the surface reflectivity. {copyright} {ital 1996 Optical Society of America.}
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 383112
- Journal Information:
- Optics Letters, Journal Name: Optics Letters Journal Issue: 15 Vol. 21; ISSN 0146-9592; ISSN OPLEDP
- Country of Publication:
- United States
- Language:
- English
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