Etching and charging effects on dose in plasma immersion ion implantation
Conference
·
OSTI ID:375929
- Eaton Corp., Beverly, MA (United States). Semiconductor Equipment Div.
- Northeastern Univ., Boston, MA (United States)
Plasma immersion ion implantation (PIII) has been tested in fabrication of semiconductor devices with shallow junctions and in hydrogenation of poly-Si thin film transistors (TFT). A general relation between the implanted dose and the processing time for plasma immersion ion implantation (PIII) can be established through the dynamic sheath model. In practice, etching and charging effects have to be taken into account in PIII dose estimation.
- OSTI ID:
- 375929
- Report Number(s):
- CONF-941144--; ISBN 1-55899-255-3
- Country of Publication:
- United States
- Language:
- English
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