Plasma Immersion Ion Implantation applied to P+N junction solar cells

Journal Article · Mon Nov 13 04:00:00 EST 2006 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.2401507· OSTI ID:20891827

Vervisch, Vanessa ^[1]; Barakel, D; Ottaviani, L; Pasquinelli, M ^[1]; Torregrosa, F ^[2]

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1. UMR TECSEN, Universite Paul Cezanne Aix Marseille III, 13397 Marseille cedex 20 (France)
2. Ion Beam Services, Av Gaston Imbert prolongee, 13790, ZI Rousset (France)

Plasma immersion ion implantation is an alternative doping technique for the formation of Ultra Shallow Junctions in semiconductor. In this study, we present the PIII technology developed by the company Ion Beam Services and called PULSION registered . We explain the advantages of PIII for the conception of thin emitter solar cells and the use of N type silicon in the fabrication of photodiode. Electrical characterisations of solar cells prepared by immersion of silicon wafer in BF3 plasma are presented, showing a satisfying photovoltaic behaviour and more specially an increase of internal quantum efficiency in the short wavelength range, due to the thickness of the emitter.

• OSTI ID: 20891827
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 866; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BORON FLUORIDES
FABRICATION
ION BEAMS
ION IMPLANTATION
P-N JUNCTIONS
PHOTOVOLTAIC EFFECT
PLASMA
QUANTUM EFFICIENCY
SEMICONDUCTOR MATERIALS
SILICON
SOLAR CELLS
THICKNESS