Two-dimensional simulation and modeling for dynamic sheath expansion during plasma immersion ion implantation
- Northeastern Univ., Boston, MA (United States)
Plasma immersion ion implantation (PIII) has been utilized as a low cost, low energy doping method for large area targets with applications to semiconductor manufacturing. They include doping, shallow junction formation, hydrogenation for poly-Si thin film transistors, and SIMOX (Separated by IMplant of OXygen) structure formation. The characteristics of the dynamic sheath expansion during PIII process is very important for the optimum PIII configuration design and process control in order to obtain more accurate doping results such as the implant dose and impurity profile. For example, the sheath thickness is critical to chamber design and monoenergetic ion implant for a more accurate control of as-implanted impurity profile of shallow junction and SIMOX structures. A PDP2 simulation code has been used to simulate PIII process which will aid in understanding the physics of PIII processes and obtain the optimum process parameters. This model was verified by comparing with the PDP2 computer simulations and the experimental results of the PIII doping processes.
- OSTI ID:
- 428035
- Report Number(s):
- CONF-960634--
- Country of Publication:
- United States
- Language:
- English
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