The effects of hadronic radiation on silicon microstrip detectors with variable strip pitch
The effects of charged hadronic radiation on silicon microstrip detectors have been investigated. The detectors are single-sided, AC-coupled, FOXFET biased, and have a variable strip pitch (wedge detectors). Two devices were irradiated with 500 MeV protons at TRIUMF in two separate exposures. Each exposure involved a fluence greater than 1 X 10{sup 13} protons/cm{sup 2} Approximately 40 days after each irradiation, the radiation damage constant {alpha} was measured to be approximately 2 X 10{sup {minus}17} amps/cm. Using capacitance versus voltage (CV) measurements, a time dependent increase in the depletion voltage has been observed with an annealing time constant of approximately 100 days. Furthermore, the frequency dependence of the sensitivity (depletion slope) has exhibited a similar annealing behavior. A model has been constructed by extending that of Li and Kraner to account for this effect.
- OSTI ID:
- 375004
- Report Number(s):
- CONF-9304297-; ISSN 0003-0503; TRN: 96:004080-0396
- Journal Information:
- Bulletin of the American Physical Society, Vol. 40, Issue 2; Conference: 1993 joint meeting of the American Physical Society and the American Association of Physics Teachers, Washington, DC (United States), 12-15 Apr 1993; Other Information: PBD: Apr 1995
- Country of Publication:
- United States
- Language:
- English
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