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Radiation tolerance of the FOXFET biasing scheme for AC-coupled Si microstrip detectors

Conference · · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:6908028
;  [1]; ; ;  [2];  [3];  [4];  [5];  [6];  [7]
  1. INFN, Padova (Italy)
  2. INFN, Padova (Italy) Univ. di Padova (Italy). Dipt. di Fisica
  3. INFN, Padova (Italy) Univ. di Modena (Italy). Facolta di Ingegneria
  4. CNR-FRAE, Bologna (Italy)
  5. Univ. di Padova (Italy). Dept. di Elettronica e Informatica
  6. INFN, Padova (Italy) Univ. di Cagliari (Italy). Instituto di Elettrotecnica
  7. INFN, Padova (Italy) Univ. di Padova (Italy). Dept. di Elettronica e Informatica
The radiation response of FOXFETs has been studied for proton, gamma and neutron exposures. The punch-through behavior, which represents the normal FET operating conditions in Si microstrip detectors, has been found to be much less sensitive to radiation damage than threshold voltage. The device performance has been elucidated by means of two-dimensional simulations. The main radiation effects have been also taken into account in the numerical analysis and separately examined.
OSTI ID:
6908028
Report Number(s):
CONF-930704--
Conference Information:
Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 40:6Pt1
Country of Publication:
United States
Language:
English

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