Physical and numerical modeling of gettering of precipitated metallic impurities in Si
- Department of Mechanical Engineering and Materials Science, Duke University, Durham, North Carolina 27708-0300 (United States)
Numerical modeling of impurity gettering from multicrystalline Si for solar cell production has been carried out using Fe as a model impurity. Calculated nonradiative minority carrier lifetime change in the course of gettering is used as a tool in evaluating the gettering efficiency. Derivation of capture crosssection of impurity precipitates, as compared to single atom recombination centers, is presented. Low efficiency of conventional application of gettering process is explained by the modeling results. Variable temperature gettering process is modeled and predicted to provide high gettering efficiency and short needed gettering times. {copyright} {ital 1999 American Institute of Physics.}
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 355392
- Report Number(s):
- CONF-980935--
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 462; ISSN 0094-243X; ISSN APCPCS
- Country of Publication:
- United States
- Language:
- English
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