Physical and numerical modeling of impurity gettering in silicon
- Department of Mechanical Engineering and Materials Science, Duke University, Durham, North Carolina 27708-0300 (United States)
Physical and numerical modeling of gettering metallic impurities away from Si device active regions has been carried out. The modeled aspects include the dissolution of precipitated impurity (if any), diffusion of dissolved impurities from the gettered to the gettering region, and gettered impurity stabilization in the gettering region via segregation and/or precipitation processes. The modeled impurities include fast diffusing interstitial (i) species and substitutional-interstitial (s-i) species. A wafer backside Al layer, wafer frontside indiffusion of P, indiffusion of P together with an Al layer (P+Al), and intrinsic gettering (IG) are the modeled gettering techniques. The gettering of i species may be rapidly accomplished using Al or IG, via segregation or precipitation processes. The gettering of s-i species involves point defects and is best accomplished by the P+Al technique. If initially impurities are precipitated, they can only be efficiently gettered in a reasonable time at temperatures much higher than the precipitation temperature. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 552829
- Report Number(s):
- CONF-961178--
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 394; ISSN APCPCS; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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