Aluminum gettering and transition metal precipitates in PV silicon
- Department of Materials Science, University of California, Berkeley, Berkeley, California 94720 (United States)
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
- Department of Materials Science, University of California, Berkeley, Berkeley , California 94720 (United States)
Iron is used as a model impurity to study aluminum gettering and iron precipitation in silicon. Aluminum gettering was found to be effective in removing iron contamination from float zone silicon, greatly increasing minority carrier diffusion lengths from 30{approximately}50{mu}m to 150{approximately}170{mu}m. The same process does not significantly improve PV silicon materials, CZ, cast multicrystalline, and EFG. Finite difference modeling suggests that Al gettering in PV silicon is not diffusion limited. It is suggested that barriers to dissolution of impurity precipitates are the main cause of the insufficient gettering response in PV silicon. Initial results of a precipitation and dissolution study are presented, as well as new gettering simulation capabilities. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 552876
- Report Number(s):
- CONF-961178--
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 394; ISSN 0094-243X; ISSN APCPCS
- Country of Publication:
- United States
- Language:
- English
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