X-ray diffraction study of chalcopyrite ordering in epitaxial ZnSnP{sub 2} grown on GaAs

Journal Article · Tue Jun 01 04:00:00 EDT 1999 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.123219· OSTI ID:345399

Francoeur, S; Seryogin, G A; Nikishin, S A; Temkin, H ^[1]

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1. Electrical Engineering Department, Texas Tech University, Lubbock, Texas 79409 (United States)

We report on the structural characterization of epitaxial ZnSnP{sub 2} grown on GaAs (001). Ordering of Zn and Sn atoms in the cation sublattice is observed by high-resolution x-ray diffraction. By varying the growth conditions, samples with two distinct structures were obtained: one showing chalcopyrite ordering with the tetragonal axis oriented along the growth direction and the other showing no evidence of ordering. Chalcopyrite ordering was determined unambiguously by observing several characteristic reflections uniquely identifying this structure. {copyright} {ital 1999 American Institute of Physics.}

• OSTI ID: 345399
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 24 Vol. 74; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHALCOPYRITE
CRYSTAL STRUCTURE
MOLECULAR BEAM EPITAXY
ORDER-DISORDER TRANSFORMATIONS
STOICHIOMETRY
STRUCTURAL CHEMICAL ANALYSIS
TIN COMPOUNDS
TIN PHOSPHIDES
X-RAY DIFFRACTION
ZINC COMPOUNDS
ZINC PHOSPHIDES