Antiphase domain boundary formation in single-crystal chalcopyrite-structure ZnGeAs sub 2 grown on GaAs

Journal Article · Mon Oct 09 04:00:00 EDT 1989 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.102304· OSTI ID:5490328

Solomon, G S; Posthill, J B; Timmons, M L ^[1]

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1. Research Triangle Institute, Research Triangle Park, North Carolina 27709-2194 (US)

Using transmission electron microscopy we have observed antiphase domain boundaries in single-crystal (001) ZnGeAs{sub 2} grown on vicinal (100) GaAs by organometallic vapor phase epitaxy. These antiphase domains boundaries pertain only to the cation sublattice of the chalcopyrite-structure ZnGeAs{sub 2} and are initiated at the heteroepitaxial interface because there exists a level of ordering on the cation sublattice in the ZnGeAs{sub 2} epitaxial film that is absent in the GaAs substrate. There are two possible types of displacement vectors characterizing these antiphase domain boundaries, and a zinc-blende-structure substrate orientation to eliminate the boundaries is suggested.

• OSTI ID: 5490328
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 55:15; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
360602* -- Other Materials-- Structure & Phase Studies
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CHALCOPYRITE
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COPPER COMPOUNDS
COPPER SULFIDES
CRYSTALS
DEPOSITION
DOMAIN STRUCTURE
ELECTRON MICROSCOPY
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GERMANIUM ARSENIDES
GERMANIUM COMPOUNDS
INTERFACES
IRON COMPOUNDS
IRON SULFIDES
MICROSCOPY
MINERALS
MONOCRYSTALS
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PNICTIDES
SULFIDE MINERALS
SULFIDES
SULFUR COMPOUNDS
SURFACE COATING
TRANSITION ELEMENT COMPOUNDS
TRANSMISSION ELECTRON MICROSCOPY
VAPOR PHASE EPITAXY
ZINC ARSENIDES
ZINC COMPOUNDS