Electron beam induced current and cathodoluminescence imaging of the antiphase domain boundaries in GaAs grown on Si

Journal Article · Mon Jan 22 00:00:00 EST 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.102790· OSTI ID:6952327

Nauka, K; Reid, G A ^[1]; Liliental-Weber, Z ^[2]

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1. Hewlett-Packard Company, Palo Alto, California 94304 (USA)
2. Materials and Chemical Sciences Division, Center for Advanced Materials, Lawrence Berkeley Laboratory, Berkeley, California 94720 (USA)

Electrical and optical properties of antiphase domain boundaries (APBs) in GaAs epitaxial layers grown on Si substrates have been investigated using cathodoluminescence, electron beam induced current, and scanning deep level transient spectroscopy. It was found that APBs reduce near-band-gap luminescence and minority-carrier lifetime. In contrast to recombination at threading dislocations in GaAs films, the nonradiative recombination processes at APBs are not due to deep traps but rather to a continuum of band-gap states introduced by APBs.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 6952327
• Journal Information: Applied Physics Letters; (USA), Vol. 56:4; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
PHYSICAL PROPERTIES
CARRIER LIFETIME
CATHODOLUMINESCENCE
CRYSTAL DEFECTS
DEEP LEVEL TRANSIENT SPECTROSCOPY
DISLOCATIONS
DOMAIN STRUCTURE
ELECTRICAL PROPERTIES
ELECTRON BEAMS
ENERGY GAP
EXPERIMENTAL DATA
MICROSTRUCTURE
RECOMBINATION
SILICON
TRAPS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CRYSTAL STRUCTURE
DATA
ELEMENTS
GALLIUM COMPOUNDS
INFORMATION
LEPTON BEAMS
LIFETIME
LINE DEFECTS
LUMINESCENCE
NUMERICAL DATA
PARTICLE BEAMS
PNICTIDES
SEMIMETALS
SPECTROSCOPY
360603* - Materials- Properties