Electron beam induced current and cathodoluminescence imaging of the antiphase domain boundaries in GaAs grown on Si
Journal Article
·
· Applied Physics Letters; (USA)
- Hewlett-Packard Company, Palo Alto, California 94304 (USA)
- Materials and Chemical Sciences Division, Center for Advanced Materials, Lawrence Berkeley Laboratory, Berkeley, California 94720 (USA)
Electrical and optical properties of antiphase domain boundaries (APBs) in GaAs epitaxial layers grown on Si substrates have been investigated using cathodoluminescence, electron beam induced current, and scanning deep level transient spectroscopy. It was found that APBs reduce near-band-gap luminescence and minority-carrier lifetime. In contrast to recombination at threading dislocations in GaAs films, the nonradiative recombination processes at APBs are not due to deep traps but rather to a continuum of band-gap states introduced by APBs.
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 6952327
- Journal Information:
- Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:4; ISSN APPLA; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CARRIER LIFETIME
CATHODOLUMINESCENCE
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DATA
DEEP LEVEL TRANSIENT SPECTROSCOPY
DISLOCATIONS
DOMAIN STRUCTURE
ELECTRICAL PROPERTIES
ELECTRON BEAMS
ELEMENTS
ENERGY GAP
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LEPTON BEAMS
LIFETIME
LINE DEFECTS
LUMINESCENCE
MICROSTRUCTURE
NUMERICAL DATA
PARTICLE BEAMS
PHYSICAL PROPERTIES
PNICTIDES
RECOMBINATION
SEMIMETALS
SILICON
SPECTROSCOPY
TRAPS
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CARRIER LIFETIME
CATHODOLUMINESCENCE
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DATA
DEEP LEVEL TRANSIENT SPECTROSCOPY
DISLOCATIONS
DOMAIN STRUCTURE
ELECTRICAL PROPERTIES
ELECTRON BEAMS
ELEMENTS
ENERGY GAP
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LEPTON BEAMS
LIFETIME
LINE DEFECTS
LUMINESCENCE
MICROSTRUCTURE
NUMERICAL DATA
PARTICLE BEAMS
PHYSICAL PROPERTIES
PNICTIDES
RECOMBINATION
SEMIMETALS
SILICON
SPECTROSCOPY
TRAPS