On the use of convergent beam electron diffraction for identification of antiphase boundaries in GaAs grown on Si

Conference · Fri Jan 01 04:00:00 EST 1988

OSTI ID:5310636

Liliental-Weber, Z; Parechanian-Allen, L; Washburn, J

This study shows that dynamical coupling effcts in CBED patterns can be unambiguously used to detect APBs. A high density of APBs can be present in GaAs grown by MOCVD (metalorganic chemical vapor depsoition) on Si (100) surfaces. APB formation is promoted by surface contamination and irregularities. APBs act as natural obstacles for the propagation of twins and stacking faults into the growing epitaxial layer. Faceting of APBs is probably connected with anisotropy of the interfacial energy of APBs. In most cases extended surface areas of APBs were observed to lie on the energetically favorable )110) planes. This observation is in agreement with earlier theoretical calculations. 17 refs, 6 figs.,

• Research Organization: Lawrence Berkeley Lab., CA (USA); California Univ., Berkeley (USA). Dept. of Materials Science and Mineral Engineering; Kopin Corp., Taunton, MA (USA)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 5310636
• Report Number(s): LBL-24749; CONF-880174-1; ON: DE88008220
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COHERENT SCATTERING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DEPOSITION
DIFFRACTION
DOMAIN STRUCTURE
ELECTRON DIFFRACTION
ELEMENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
IMAGES
INTERFACES
LASERS
PNICTIDES
SCATTERING
SEMIMETALS
SILICON
SUBSTRATES
SURFACE COATING