Direct Measurement of Surface Defect Level Distribution Associated with GaAs Antiphase Boundaries

Journal Article · Fri Jan 01 04:00:00 EST 1999 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.82.612· OSTI ID:305848

Xu, Q; Hsu, J W ^[1]

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1. Department of Physics, University of Virginia, Charlottesville, Virginia 22901 (United States)

Using an electrostatic force microscope, we measure surface contact potential (SCP) variations across antiphase boundaries (APBs) on GaAs films grown on Ge substrates. The SCP at the APBs is consistently and reproducibly measured to be 30 mV higher than that at GaAs domains. This is due to Fermi levels being pinned at different surface states. The identical electrical behavior observed for all APBs indicates that they are the lowest energy {l_brace}110{r_brace} orientation. The sign of observed Fermi level shift is consistent with a prevalence of Ga-Ga bonds at real {l_brace}110{r_brace} APBs. {copyright} {ital 1999} {ital The American Physical Society}

• DOE Contract Number: FG02-98ER45679
• OSTI ID: 305848
• Journal Information: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 3 Vol. 82; ISSN 0031-9007; ISSN PRLTAO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL BONDS
CRYSTAL DEFECTS
ELECTRON MICROSCOPY
FERMI LEVEL
GALLIUM ARSENIDES
GERMANIUM
SURFACE POTENTIAL
THIN FILMS