Long-range order in thin epitaxial Fe{sub 3}Si films grown on GaAs(001)

Journal Article · Mon Aug 15 04:00:00 EDT 2005 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PhysRevB.72.075329· OSTI ID:20719331

Jenichen, B; Kaganer, V M; Herfort, J; Satapathy, D K; Schoenherr, H P; Braun, W; Ploog, K H ^[1]

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1. Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin (Germany)

As-grown thin epitaxial Fe{sub 3}Si films fabricated by molecular beam epitaxy on GaAs(001) are studied by grazing incidence x-ray diffraction. The long-range order parameters of the films of different stoichiometry are determined by measuring fundamental and superlattice crystal truncation rods and comparing them to simulations in dynamical approximation. Two order parameters, associated with the degree of migration of Si atoms into different Fe sublattices, are obtained. A residual intermixing of the sublattices is found, even near complete stoichiometry. The relative positions of the Fe{sub 3}Si and GaAs lattices are determined. Fe atoms in Fe{sub 3}Si are located at the positions of the Ga atoms in GaAs, with an additional shift of 0.1{+-}0.04 A of the tetragonally distorted Fe{sub 3}Si lattice normal to the interface.

• OSTI ID: 20719331
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 7 Vol. 72; ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
CRYSTALS
FERROMAGNETIC MATERIALS
FILMS
GALLIUM ARSENIDES
INTERFACES
IRON SILICIDES
LAYERS
MOLECULAR BEAM EPITAXY
ORDER PARAMETERS
SEMICONDUCTOR MATERIALS
SIMULATION
STOICHIOMETRY
SUPERLATTICES
X-RAY DIFFRACTION