Structure of HfO{sub 2} films epitaxially grown on GaAs (001)
- Research Division, National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China)
High-quality HfO{sub 2} films of technologically important thickness ranging from 1.8 to 17 nm have been grown epitaxially on GaAs (001) by molecular beam epitaxy. Thorough structural and morphological investigations were carried out by x-ray scattering and high-resolution transmission electron microscopy. The films exhibit an atomically sharp interface with the substrate and are of a monoclinic phase with predominant (001)-plane epitaxy between the HfO{sub 2} films and GaAs, in spite of a large lattice mismatch of >8.5%.
- OSTI ID:
- 20861124
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 12 Vol. 89; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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