Epitaxial ZnS films grown on GaAs (001) and (111) by pulsed-laser ablation

Journal Article · Tue Jun 01 00:00:00 EDT 1993 · Journal of Applied Physics; (United States)

DOI:https://doi.org/10.1063/1.353956· OSTI ID:6785750

McCamy, J W ^[1]; Lowndes, D H; Budai, J D; Zuhr, R A ^[2]; Zhang, X ^[1]

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1. Department of Materials Science and Engineering, The University of Tennessee, Knoxville, Tennessee 37996-1200 (United States)
2. Solid State Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, Tennessee 37831-6056 (United States)

Pulsed KrF (248 nm) laser ablation of a polycrystalline ZnS target has been used to grow very smooth and carbon-free, epitaxial ZnS thin films on GaAs (001) and (111). Films were grown at temperatures of 150--450 [degree]C, using a rotating substrate heater and deposition geometry that produces highly uniform film thickness, without nucleation or surface-roughening problems. X-ray diffraction and high-resolution transmission electron microscopy (HRTEM) show that the ZnS films are fully epitaxial (in-plane aligned). Films grown at the optimum temperature of 325 [degree]C have x-ray rocking curve widths that are indistinguishable from molecular-beam-epitaxy-grown ZnS/GaAs films of the same thickness. Rutherford backscattering spectrometry and HRTEM show that in films [similar to]275 nm thick, the [similar to]150 nm nearest the GaAs-ZnS interface is highly faulted, due to the [similar to]4.1% lattice mismatch and/or the low ZnS stacking fault energy, but the upper [similar to]125 nm is much less defective. The anisotropy of the ZnS epitaxial growth rate between the GaAs (001) and GaAs (111) surfaces was found to be slightly temperature dependent.

• DOE Contract Number: AC05-84OR21400
• OSTI ID: 6785750
• Journal Information: Journal of Applied Physics; (United States), Vol. 73:11; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ZINC SULFIDES
ABLATION
ELECTRON MICROSCOPY
EPITAXY
LASER RADIATION
MICROSTRUCTURE
MOESSBAUER EFFECT
STACKING FAULTS
THIN FILMS
X-RAY DIFFRACTION
CHALCOGENIDES
COHERENT SCATTERING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIFFRACTION
ELECTROMAGNETIC RADIATION
FILMS
INORGANIC PHOSPHORS
MICROSCOPY
PHOSPHORS
RADIATIONS
SCATTERING
SULFIDES
SULFUR COMPOUNDS
ZINC COMPOUNDS
360601* - Other Materials- Preparation & Manufacture
360602 - Other Materials- Structure & Phase Studies