Growth of epitaxial ZnS films by pulsed-laser ablation
- Tennessee Univ., Knoxville, TN (United States). Dept. of Materials Science and Engineering
- Oak Ridge National Lab., TN (United States)
Pulsed KrF (248nm) laser ablation of a polycrystalline ZnS target has been used to grow high quality, carbon-free, epitaxial ZnS thin films on GaAs(001), GaAs(111), and GaP(001). The films were grown at temperatures of 150--450{degrees}C, using a rotating substrate heater and deposition geometry that produces films with highly uniform thickness. X-ray rocking curves are consistent with (111) stacking faults being the dominant defects in the ZnS films grown on GaAs. The estimated stacking fault density is {approximately}6 {times} 10{sup 10} cm{sup {minus}3}, comparable to the best MOCVD ZnS films. RBS analysis shows that these defects are located predominantly near the GaAs-ZnS interface. The anisotropy of the ZnS growth rate, between the GaAs(001) and GaAs(111) surfaces, was found to be temperature-dependent.
- Research Organization:
- Oak Ridge National Lab., TN (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 10114755
- Report Number(s):
- CONF-911202-29; ON: DE92005476
- Resource Relation:
- Conference: Annual fall meeting of the Materials Research Society (MRS),Boston, MA (United States),2-6 Dec 1991; Other Information: PBD: Nov 1991
- Country of Publication:
- United States
- Language:
- English
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