Growth of epitaxial ZnS films by pulsed-laser ablation

Conference · Fri Nov 01 04:00:00 EST 1991

OSTI ID:5957661

McCamy, J W ^[1]; Lowndes, D H; Budai, J D; Chakoumakos, B C; Zuhr, R A ^[2]

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1. Tennessee Univ., Knoxville, TN (United States). Dept. of Materials Science and Engineering
2. Oak Ridge National Lab., TN (United States)

Pulsed KrF (248nm) laser ablation of a polycrystalline ZnS target has been used to grow high quality, carbon-free, epitaxial ZnS thin films on GaAs(001), GaAs(111), and GaP(001). The films were grown at temperatures of 150--450{degrees}C, using a rotating substrate heater and deposition geometry that produces films with highly uniform thickness. X-ray rocking curves are consistent with (111) stacking faults being the dominant defects in the ZnS films grown on GaAs. The estimated stacking fault density is {approximately}6 {times} 10{sup 10} cm{sup {minus}3}, comparable to the best MOCVD ZnS films. RBS analysis shows that these defects are located predominantly near the GaAs-ZnS interface. The anisotropy of the ZnS growth rate, between the GaAs(001) and GaAs(111) surfaces, was found to be temperature-dependent.

• Research Organization: Oak Ridge National Lab., TN (United States)
• Sponsoring Organization: DOE; USDOE, Washington, DC (United States)
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 5957661
• Report Number(s): CONF-911202-29; ON: DE92005476
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
360602 -- Other Materials-- Structure & Phase Studies
ABLATION
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DEPOSITION
ELECTROMAGNETIC RADIATION
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INORGANIC PHOSPHORS
LASER RADIATION
PHOSPHORS
PNICTIDES
RADIATIONS
SUBSTRATES
SULFIDES
SULFUR COMPOUNDS
THIN FILMS
ZINC COMPOUNDS
ZINC SULFIDES