Ordered structures in GaAs/sub 0. 5/Sb/sub 0. 5/ alloys grown by organometallic vapor phase epitaxy

Journal Article · Mon Jun 09 04:00:00 EDT 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96830· OSTI ID:5727284

Jen, H R; Cherng, M J; Stringfellow, G B

Electron diffraction measurements on (100) GaAs/sub 1-x/Sb/sub x/ layers with xroughly-equal0.5 grown by organometallic vapor phase epitaxy indicate that ordered phases are formed during growth. Two ordered phases are observed. The simple, tetragonal AuCu-I type phase consists of alternating )100) oriented GaAs and GaSb layers. Only the two variants with the tetragonal c axes perpendicular to the growth direction are observed. At least two variants are observed for the chalcopyrite E1/sub 1/ structure with alternating )210) oriented GaAs and GaSb layers.

• Research Organization: Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112
• DOE Contract Number: FG02-84ER45061
• OSTI ID: 5727284
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 48:23; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
360602* -- Other Materials-- Structure & Phase Studies
ALLOYS
ANTIMONY ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
COHERENT SCATTERING
DIFFRACTION
ELECTRON DIFFRACTION
EPITAXY
GALLIUM ALLOYS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LAYERS
PNICTIDES
SCATTERING