Total dose effects on gate controlled lateral PNP bipolar junction transistors
Journal Article
·
· IEEE Transactions on Nuclear Science
- Univ. of Bordeaux 1, Talence (France). Lab. IXL; and others
A gate controlled lateral PNP bipolar device has been designed in a commercial BiCMOS process to investigate its sensitivity to radiation-induced degradation. New experimental and simulated results concerning total dose effects are presented. The improved radiation hardness of this device working in its accumulation mode is shown. The influence of the gate potential during irradiation is studied as well as the effect of the gate potential on the degraded current characteristics.
- OSTI ID:
- 323934
- Report Number(s):
- CONF-980705--
- Journal Information:
- IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 45; ISSN 0018-9499; ISSN IETNAE
- Country of Publication:
- United States
- Language:
- English
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