Minimizing gain degradation in lateral PNP bipolar junction transistors using gate control

Journal Article · Wed Dec 01 04:00:00 EST 1999 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers)

DOI:https://doi.org/10.1109/23.819134· OSTI ID:20014723

Barnaby, H J; Cirba, C; Schrimpf, R D; Kosier, S; Fouillat, P; Montagner, X

Gain degradation in lateral PNP bipolar junction transistors is minimized by controlling the potential of a gate terminal deposited above the active base region. Gate biases that deplete the base during radiation exposure establish electric fields in the base oxide that limit the generation of oxide defects. Conversely, gate biases that accumulate the base during device operation suppress gain degradation by decreasing the probability of carrier recombination with interface states. The results presented in this paper suggest that, for gate controlled LPNP transistors designed for operation in radiation environments, a dynamic control of the gate potential improves the transistor's radiation hardness and extend its operating life.

• Research Organization: Vanderbilt Univ., Nashville, TN (US)
• OSTI ID: 20014723
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers) Journal Issue: 6Pt1 Vol. 46; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
CRYSTAL DEFECTS
ELECTRIC POTENTIAL
GAIN
JUNCTION TRANSISTORS
MITIGATION
PHYSICAL RADIATION EFFECTS
SERVICE LIFE