Improved CdZnTe detectors grown by vertical Bridgman process

Book · Thu Dec 31 04:00:00 EST 1998

OSTI ID:323850

Lynn, K G; Weber, M ^[1]; Glass, H L; Flint, J P ^[2]; Szeles, C ^[3]

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1. Washington State Univ., Pullman, WA (United States). Dept. of Physics
2. Johnson Matthey Electronics, Spokane, WA (United States)
3. II-VI, Inc., Saxonburg, PA (United States). eV Products Div.

The {gamma} ray ({sup 57}Co) and {alpha} particle ({sup 241}Am) detector response of Cd{sub 1{minus}x}Zn{sub x}Te crystals grown by vertical Bridgman technique was studied under both positive and negative bias conditions. Post-growth processing was utilized to produce a high-resistivity material with improved charge-collection properties. Samples of various Zn concentrations were investigated by I-V measurements and thermally stimulated spectroscopies to determine the ionization energies of deep levels in the band gap. When the post-processing conditions were optimized the low-energy tailing of the {gamma}-ray photopeaks was significantly reduced and an energy resolution of under 5% was achieved for the 122 keV {gamma}-photon line in crystals with x = 0.2 Zn content at room temperature. A peak to background ratio of 14:1 for the 122 keV photopeak from {sup 57}Co was observed on the best sample, using a standard planar detection geometry. The low-energy 14.4 keV X-ray line could also be observed and distinguished from the noise.

• OSTI ID: 323850
• Report Number(s): CONF-971201--
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ALPHA DETECTION
AMBIENT TEMPERATURE
BRIDGMAN METHOD
CADMIUM TELLURIDES
EXPERIMENTAL DATA
GAMMA DETECTION
PERFORMANCE
RESPONSE FUNCTIONS
SEMICONDUCTOR DETECTORS
ZINC TELLURIDES