Fabrication of radiation detector using PbI{sub 2} crystals
- Tohoku Inst. of Technology, Sendai (Japan)
Radiation detectors have been fabricated from lead iodide (PbI{sub 2}) crystals grown by two methods: zone melting and Bridgman methods. In response characteristics of the detector fabricated from crystals grown by the zone melting method, a photopeak for {gamma}-rays from an {sup 241}Am source (59.5 KeV) has been clearly observed with applied detector bias of 500 V at room temperature. The hole drift mobility is estimated to be about 5.5 cm{sup 2}/Vs from measurement of pulse rise time for 5.48 MeV {alpha}-rays from {sup 241}Am. By comparing the detector bias versus saturated peak position of the PbI{sub 2} detector with that of CdTe detector, the average energy for producing electron-hole pairs is estimated to be about 8.4 eV for the PbI{sub 2} crystal. A radiation detector fabricated from PbI{sub 2} crystals grown by the Bridgman method, however, exhibited no response for {gamma}-rays.
- OSTI ID:
- 136882
- Report Number(s):
- CONF-941061--
- Journal Information:
- IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 4Pt1 Vol. 42; ISSN 0018-9499; ISSN IETNAE
- Country of Publication:
- United States
- Language:
- English
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