Linear x-ray detector array made on bulk CdZnTe for 30-100 keV energy.
A CdZnTe detector grown by the high pressure Bridgman (HPB) growth technique was tested using high energy x-rays (30{approx}100 keV), and the performance was compared with a commercially available Nal scintillating detector of 5 cm thickness. The charge collection efficiency of a CdZnTe detector is as high as 90% at relatively low electric field, 600 V/cm. At high x-ray photon energies, the detection efficiency is reduced due to the thickness of the CdZnTe. A 32 channel linear array was fabricated on 1.2{approx}1.7 mm thick CdZnTe, of which the detector area was 175 x 800 {micro}m{sup 2} and the pitch size 250 {micro}m. The measured dark current for the 16 element detector was as low as 0.1 pA at 800 V/cm with an excellent uniformity. Energy spectra were measured using a Co{sup 57} radiation source. A small pixel effect and charge sharing were observed. The energy resolution was improved and compared with the large area detector. The array detector gave an average 5.8% full-width-half-maximum (FWHM) at 122 keV photopeak. The large area detector of the same material before fabrication exhibited a low energy tail at the photopeak, which limits the photopeak FWHM to 8%.
- Research Organization:
- Argonne National Laboratory (ANL)
- Sponsoring Organization:
- ER
- DOE Contract Number:
- AC02-06CH11357
- OSTI ID:
- 938215
- Report Number(s):
- ANL/MSD/JA-28280
- Journal Information:
- J. Electron. Mater., Journal Name: J. Electron. Mater. Journal Issue: 6 ; Jun. 1997 Vol. 26; ISSN JECMA5; ISSN 0361-5235
- Country of Publication:
- United States
- Language:
- ENGLISH
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