CdZnTe x-ray detector for 30 {endash} 100 keV energy
- Illinois Univ., Chicago, IL (United States). Dept. of Physics; Argonne National Lab., IL (United States)
- Argonne National Lab., IL (United States)
High-pressure-Bridgman (HPB) grown CdZnTe x-ray detectors 1.25-1.7 mm thick were tested using monochromatic x-rays of 30 to 100 keV generated by a high energy x-ray generator. The results were compared with a commercially available 5 cm thick NaI detector. A linear dependence of the counting rate versus the x-ray generator tube current was observed at 58.9 keV. The measured pulse height of the photopeaks shows a linear dependence on energy. Electron and hole mobility-lifetime products ({mu}{tau}) were deduced by fitting bias dependent photopeak channel numbers at 30 keV x-ray energy. Values of 2 x 10{sup -3} cm{sup 2}/V and 2 x 10{sup -4}cm{sup 2}/V were obtained for {mu}{tau}{sub e} and {mu}{tau}{sub p}, respectively. The detector efficiency of CdZnTe at a 100 V bias was as high as, or higher than 90 % compared to a NaI detector. At x-ray energies higher than 70 keV, the detection efficiency becomes a dominant factor and decreases to 75 % at 100 keV.
- Research Organization:
- Argonne National Lab., IL (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-31109-ENG-38
- OSTI ID:
- 397089
- Report Number(s):
- ANL/MSD/CP--90960; CONF-960848--18; ON: DE96014399
- Country of Publication:
- United States
- Language:
- English
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