CdZnTe photodiode arrays for medical imaging
Journal Article
·
· Journal of Electronic Materials
- Spire Corporation, Bedford, MA (United States)
- Technion-Israel Inst. of Technology, Haifa (Israel)
In this paper, we report on the design, fabrication, and performance of the first CdZnTe Schottky photodiode arrays for radiation detection. High pressure Bridgman-grown CdZnTe substrates with bulk resistivities in the range 10{sup 8} to 10{sup 10} ohm-cm were used. CdZnTe Schottky photodiodes were formed with In and Ti/Au contacts. Diode arrays with pixel sizes from 1000 x 1000 {mu}m to 100 x 100 {mu}m were fabricated. The diode`s I-V characteristics exhibited low leakage current and high bulk resistivity; leakage current decreased as diode pixel size was reduced. Response of these detector arrays to high energy photons was uniform and their energy resolution improved with smaller pixel size. 14 refs., 9 figs.
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FG02-94ER81904
- OSTI ID:
- 420812
- Report Number(s):
- CONF-9510388--
- Journal Information:
- Journal of Electronic Materials, Journal Name: Journal of Electronic Materials Journal Issue: 8 Vol. 25; ISSN JECMA5; ISSN 0361-5235
- Country of Publication:
- United States
- Language:
- English
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