Performance of p-i-n CdZnTe radiation detectors and their unique advantages
- Spire Corp., Bedford, MA (United States)
- Radiation Monitoring Devices, Watertown, MA (United States)
The authors present the performance characteristics of CdZnTe radiation detectors with a new P-I-N design and their unique advantages over metal-semiconductor-metal (M-S-M) devices. In M-S-M CdZnTe detectors the bulk resistivity of the substrate largely determines the leakage current. High leakage current is a dominant noise factor for CdZnTe detector arrays, coplanar detectors, and detectors used for low X-ray energy applications. P-I-N devices provide low leakage currents. Early CdZnTe detectors exhibited polarization, were limited to small detection volumes, and some required high deposition temperatures. They have developed a new heterojunction design which can be deposited at low temperatures so that even high-pressure Bridgman CdZnTe can be used. Using the P-I-N design, CdZnTe detectors with high detection volumes (> 200 mm{sup 3}) were fabricated and exhibited low leakage current, good energy resolution, and no polarization. These detectors have significant advantages over M-S-M detectors in three specific areas. First, X-ray fluorescence studies require detectors with low leakage currents to provide less spectral broadening due to electronic noise. Second, less expensive vertical Bridgman CdZnTe material can be used for imaging applications since it normally possess too low of a bulk resistivity to be useful as a M-S-M detector. Third, leakage currents across the anode grid in large volume coplanar detectors can be significantly reduced.
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- FG02-94ER81869
- OSTI ID:
- 323852
- Report Number(s):
- CONF-971201--
- Country of Publication:
- United States
- Language:
- English
Similar Records
Noise reduction in CdZnTe coplanar-grid detectors
Performance of CdZnTe detectors passivated with energetic oxygen atoms