Constant-resistance deep-level transient spectroscopy in Si and Ge JFET`s
- Simon Fraser Univ., Vancouver, British Columbia (Canada). School of Engineering Science
- Brookhaven National Lab., Upton, NY (United States)
The recently introduced constant-resistance deep-level transient spectroscopy (CR-DLTS) was successfully applied to study virgin and radiation-damaged junction field-effect transistors (JFET`s). The authors have studied three groups of devices: commercially available-discrete silicon JFET`s; virgin and exposed to high-level neutron radiation silicon JFET`s, custom-made by using a monolithic technology; and commercially available discrete germanium p-channel JFET`s. CR-DLTS is similar to both the conductance DLTs and to the constant-capacitance variation (CC-DLTS). Unlike the conductance and current DLTS, it is independent of the transistor size and does not require simultaneous measurement of the transconductance or the free-carrier mobility for calculation of the trap concentration. Compared to the CC-DLTS, it measures only the traps inside the gate-controlled part of the space charge region. Comparisons have also been made with the CC-DLTS and standard capacitance DLTS. In addition, possibilities for defect profiling in the channel have been demonstrated. CR-DLTS was found to be a simple, very sensitive, and device area-independent technique which is well suited for measurement of a wide range of deep level concentrations in transistors.
- OSTI ID:
- 308151
- Journal Information:
- IEEE Transactions on Electron Devices, Journal Name: IEEE Transactions on Electron Devices Journal Issue: 1 Vol. 46; ISSN 0018-9383; ISSN IETDAI
- Country of Publication:
- United States
- Language:
- English
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