JFET/SOS (junction field-effect transistor/silicon-on-sapphire) devices: gamma-radiation-induced effects. Technical report

Technical Report · Tue Mar 01 00:00:00 EST 1988

OSTI ID:6841589

Halle, L F; Zietlow, T C; Barnes, C E

Enhancement and depletion mode JFETs have been fabricated on silicon-on-sapphire substrates. When these devices are irradiated under bias with a /sup 60/Co source, their drain currents increase, and their threshold voltages shift in such a way that the devices become more difficult to pinch off. These effects can be explained by positive charge trapping at the silicon/sapphire interface. Gate to drain leakage currents also increase, and can be traced to interface effects at the gate edges rather than to the passivating oxide. These effects were studied as a function of dose rate and postirradiation annealing. Deep-level transient spectroscopy (DLTS) was performed prior to and following both irradiation and anneal on both the gate-drain and gate-source p-n junctions. DLTS trap bands were observed whose characteristics depended on the depth of the depletion layer and on the total gamma dose received. The DLTS spectra suggest that a continuum of levels is responsible for the bands, and that the emission kinetics are influenced by band bending at the Si/sapphire interface. The major bands corresponded in temperature with steps in capacitance-temperature curves. A correlation of these steps with the transistor characteristics suggests that channel pinch off can be influenced by capture and emission at deep centers.

• Research Organization: Aerospace Corp., El Segundo, CA (USA). Electronics Research Lab.
• OSTI ID: 6841589
• Report Number(s): AD-A-193001/5/XAB; TR-0086(6925-07)-3
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
FIELD EFFECT TRANSISTORS
PHYSICAL RADIATION EFFECTS
JUNCTION TRANSISTORS
DEEP LEVEL TRANSIENT SPECTROSCOPY
ELECTRICAL INSULATION
EMISSION
INTERFACES
KINETICS
LAYERS
PINCH EFFECT
PROGRESS REPORT
SAPPHIRE
SILICON
SPECTROSCOPY
TRANSIENTS
TRAPS
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
CHALCOGENIDES
CORUNDUM
DOCUMENT TYPES
ELEMENTS
MINERALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMIMETALS
TRANSISTORS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems