Monolithic preamplifier employing epitaxial N-channel JFETs

Conference · Fri Jan 31 23:00:00 EST 1992

OSTI ID:6969922

Radeka, V; Rescia, S ^[1]; Manfredi, P F; Re, V; Speziali, V ^[2]

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1. Brookhaven National Lab., Upton, NY (United States)
2. Pavia Univ. (Italy). Dipt. di Elettronica Istituto Nazionale di Fisica Nucleare, Milan (Italy)

This paper reports the results obtained in the research program oriented to the realisation of a monolithic preamplifier for calorimetry applications at high luminosity colliders. The main purpose of the program is to arrive at a monolithic realisation with a performance as close as possible to that of discrete preamplifiers. The junction field-effect transistors employed in discrete preamplifiers have an epitaxial channel and a very heavily doped gate diffused onto it. They present the best noise and radiation tolerance characteristics. The first step in the program implementation was, accordingly, the search for a process able to make the integration of epitaxial-channel. JFETs on a monolithic substrate possible. The integration has been accomplished on the basis of a buried-layer approach to device isolation. Individual JFETs and a complete preamplifier employing only N-channel JFETs have been realised. The characterisation of the individual devices has shown that their behaviour in terms of small signal and noise parameters is very close to that of their discrete equivalents. This result, along with the very good noise performances of the preamplifier, seems to point out that the buried layer process has fulfilled the task for which it was developed.

• Research Organization: Brookhaven National Lab., Upton, NY (United States)
• Sponsoring Organization: DOE; USDOE, Washington, DC (United States)
• DOE Contract Number: AC02-76CH00016
• OSTI ID: 6969922
• Report Number(s): BNL-48005; CONF-9202140--1; ON: DE93002951
• Country of Publication: United States
• Language: English

Related Subjects

440104* -- Radiation Instrumentation-- High Energy Physics Instrumentation
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
AMPLIFIERS
ELECTRONIC EQUIPMENT
EQUIPMENT
FIELD EFFECT TRANSISTORS
FREQUENCY DEPENDENCE
MEASURING INSTRUMENTS
NOISE
PREAMPLIFIERS
RADIATION DETECTORS
SEMICONDUCTOR DEVICES
SHOWER COUNTERS
TRANSISTORS