Contributions of bulk, interface and built-in potential to the open circuit voltage of a-Si:H solar cells
- Pennsylvania State Univ., University Park, PA (United States). Electrical Engineering Dept.
Studies have been carried out on identifying the contributions of the bulk, the p/i interface regions, and the built-in potentials, V{sub bi}, to the open circuit voltages, V{sub oc}, of p(a-SiC:H)/i(a-Si:H)/n({micro}c-Si:H) solar cells. The p-i-n solar cells studied have different i-layers and a variety of hydrogen treated p/i interface regions. Measurements are carried out on V{sub oc} with illumination intensities from 10{sup {minus}6}to 50 AM1.5 and over the temperature range from 100 to 300 K. Although it has not yet been possible to directly identify the contributions of the i-layers, the large contributions of different p/i interface regions have been identified and characterized. Built-in potentials were measured in a variety of cells and it was found that the V{sub oc}`s at AM1.5 are not limited by the V{sub bi}. The significance of the results and possible directions for quantifying the mechanisms limiting V{sub oc} in these as well as other cells are discussed.
- Sponsoring Organization:
- National Renewable Energy Lab., Golden, CO (United States); Electric Power Research Inst., Palo Alto, CA (United States); New Energy and Industrial Technology Development Organization, Tokyo (Japan)
- OSTI ID:
- 304350
- Report Number(s):
- CONF-970953--
- Country of Publication:
- United States
- Language:
- English
Similar Records
Effect of metal/P-doped a-Si:H junctions on the photovoltage of a-Si:H solar cells
Real time spectroscopic ellipsometry studies of the top junctions of a-Si:H-based solar cells