Modeling and simulation of grain growth in Si{sub 3}N{sub 4}. 2: The {alpha}-{beta} transformation

Journal Article · Fri Nov 20 04:00:00 EST 1998 · Acta Materialia

DOI:https://doi.org/10.1016/S1359-6454(98)00291-2· OSTI ID:302372

Kitayama, M ^[1]; Hirao, K; Toriyama, M; Kanzaki, S ^[2]

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1. Fine Ceramics Research Association, Nagoya, Aichi (Japan). Synergy Ceramics Lab.
2. National Industrial Research Inst. of Nagoya, Aichi (Japan)

A model for the {alpha}-{beta} transformation has been developed for completely faceted crystals as an extension of the anisotropic Ostwald ripening model developed in the companion paper. Si{sub 3}N{sub 4} grain growth simulations have been performed using various relationships between diffusion and interfacial reaction constants. It has been found that length growth is dominant, and that its growth rate is independent of width and does not change with time in the totally interfacial reaction controlled case during the {alpha}-{beta} transformation. Simulation predicts that a time-length relationship deviates from a straight line as the growth kinetics in the length direction shifts from interfacial reaction controlled to diffusion controlled. It has been confirmed that the ratio of the interfacial reaction constants of the (100) and (001) interfaces and the {alpha}-{beta} ratio are the key factors for determining the aspect ratio of {beta}-Si{sub 3}N{sub 4} grains.

• OSTI ID: 302372
• Journal Information: Acta Materialia, Journal Name: Acta Materialia Journal Issue: 18 Vol. 46; ISSN 1359-6454; ISSN ACMAFD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANISOTROPY
CRYSTAL-PHASE TRANSFORMATIONS
GRAIN GROWTH
MATHEMATICAL MODELS
SILICON NITRIDES