Modeling and simulation of grain growth in Si{sub 3}N{sub 4}. 1: Anisotropic Ostwald ripening
- Fine Ceramics Research Association, Nagoya, Aichi (Japan). Synergy Ceramics Lab.
- National Industrial Research Inst. of Nagoya, Aichi (Japan)
The anisotropic Ostwald ripening model has been developed for completely faceted crystals. This model has been applied to the simulation of grain growth in {beta}-Si{sub 3}N{sub 4} with a highly anisotropic rod-like grain shape developed in the liquid phase. The reduction of aspect ratio after the phase transformation observed by previous studies is proved to be a consequence of the anisotropic Ostwald ripening. This model predicts a growth exponent n = 3 for totally interfacial reaction constants. This would explain the puzzling results reported by previous works that growth exponents n = 3 or higher have been observed in the grain growth of faceted crystals. While the length distribution becomes wider with time, the reduced radius distribution approaches the shape that is known as the asymptotic distribution function derived from the LSW theory.
- OSTI ID:
- 302371
- Journal Information:
- Acta Materialia, Journal Name: Acta Materialia Journal Issue: 18 Vol. 46; ISSN 1359-6454; ISSN ACMAFD
- Country of Publication:
- United States
- Language:
- English
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