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Grain growth studies of silicon nitride dispersed in an oxynitride glass

Journal Article · · Journal of the American Ceramic Society; (United States)
; ;  [1]
  1. Max-Planck-Inst. fuer Metallforschung, Stuttgart (Germany). Inst. fuer Werkstoffwissenschaft
Isothermal growth of [beta]-Si[sub 3]N[sub 4] crystals dispersed in an oxynitride glass (Y-Si-Al-O-N) was studied by electron microscopy after heat treatment at temperatures between 1,550 and 1,640 C for 1 to 18 h. The [beta]-crystals exhibited growth striations introduced by intermediate coolings and these striations were used for developing a sophisticated technique for analysis of growth. It was determined that [alpha]/[beta]-transformation and Ostwald ripening can be treated as different kinetic stages of grain growth, while [beta]-nucleation was found to be insignificant. The mean diameter of the needle like [beta]-grains was almost constant during phase transformation, indicating negligible growth of the [beta]-prism plane; growth was mainly one-dimensional with the maximum mean length and aspect ratio just at the end of the phase transformation. The growth rate of the [beta]-basal plane was independent of diameter, indicating interface-controlled growth. During Ostwald ripening, the length distribution broadened and the aspect ratio of smaller grains decreased. Dissolution of small grains caused an increase in the mean diameter, while the mean aspect ratio decreased.
OSTI ID:
5724040
Journal Information:
Journal of the American Ceramic Society; (United States), Journal Name: Journal of the American Ceramic Society; (United States) Vol. 76:11; ISSN 0002-7820; ISSN JACTAW
Country of Publication:
United States
Language:
English