{ital n}-type ion implantation doping of Al{sub {ital x}}Ga{sub 1{minus}{ital x}}As (0{le}{ital x}{le}0.7)
- Sandia National Laboratories, P.O. Box 5800, Albuquerque, New Mexico 87185-0603 (United States)
Si-implant activation characteristics in Al{sub {ital x}}Ga{sub 1{minus}{ital x}}As for Al compositions of 0{percent}{endash}70{percent} AlAs are presented for doses of 5.6{times}10{sup 12} and 2.8{times}10{sup 13} cm{sup {minus}2} at 100 keV. For both doses, the effective activation efficiency ({eta}{sub eff}) is relatively constant from 0{percent} to 20{percent} AlAs ({eta}{sub eff}=64{percent} for 5.6{times}10{sup 12} cm{sup {minus}2} and 37{percent} for 2.8{times}10{sup 13} cm{sup {minus}2} for 20{percent} AlAs), goes through a minimum at 35{percent} AlAs ({eta}{sub eff}=6.6{percent} for 5.6{times}10{sup 12} cm{sup {minus}2} and 2.5{percent} for 2.8{times}10{sup 13} cm{sup {minus}2}), and then increases towards 70{percent} AlAs ({eta}{sub eff}=52.8{percent} for 5.6{times}10{sup 12} cm{sup {minus}2} and 31.1{percent} for 2.8{times}10{sup 13} cm{sup {minus}2}). The results are explained based on the compositional dependence of the ionization energy and conduction band density-of-states of AlGaAs. The effects of P coimplantation is also studied but demonstrates no significant enhancement of the activation efficiency of Si implantation for 0{percent}{endash}70{percent} AlAs. Finally, data are presented for Se implantation in Al{sub 0.2}Ga{sub 0.8}As with a maximum effective activation efficiency of 5.6{percent} achieved. {copyright} {ital 1996 American Institute of Physics.}
- Research Organization:
- Sandia National Laboratory
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 286537
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 80; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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