Si and Si/P implants in In{sub 0.5}Ga{sub 0.5}P and In{sub 0.5}Al{sub 0.5}P

Journal Article · Sat Jun 01 04:00:00 EDT 1996 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.115763· OSTI ID:284637

Zolper, J C; Chui, H C ^[1]

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1. Sandia National Laboratories, P. O. Box 5800, Albuquerque, New Mexico 87185-0603 (United States)

Si and Si/P ion implantation doping of In{sub 0.5}Ga{sub 0.5}P and In{sub 0.5}Al{sub 0.5}P has been studied for several Si and P doses at energies of 90 and 100 keV, respectively. For single Si implants in InGaP a maximum Hall sheet electron concentration of 1.33{times}10{sup 13} cm{sup {minus}2} is achieved for a Si dose of 5{times}10{sup 13} cm{sup {minus}2}. When an optimum dose (2.5{times}10{sup 13} cm{sup {minus}2}) P coimplant is performed this electron concentration is increased by 65{percent}. The same dose Si implants in InAlP show a maximum effective activation of 3.9{percent} with no P coimplantation and 5.2{percent} with a P-implant dose 1.5 times the silicon dose. The apparent donor ionization energies are estimated from variable temperature Hall measurements to be 2{endash}5 meV for InGaP and {approximately}80 meV for InAlP. The deeper level in InAlP is attributed to the DX level found in the Al-containing material. The reduction in sheet resistance associated with the use of Si/P coimplantation in InGaP containing heterostructures should contribute to significant performance enhancements in HFETs and lasers. {copyright} {ital 1996 American Institute of Physics.}

• Research Organization: Sandia National Laboratory
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 284637
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 24 Vol. 68; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACTIVATION ENERGY
ALUMINIUM PHOSPHIDES
CARRIER DENSITY
CRYSTAL DOPING
ENERGY LEVELS
GALLIUM PHOSPHIDES
HALL EFFECT
IMPURITY STATES
INDIUM PHOSPHIDES
ION IMPLANTATION
IONIZATION
PHOSPHORUS ADDITIONS
SILICON ADDITIONS