Optimization of x-ray sources for proximity lithography produced by a high average power Nd:glass laser{sup a}

Journal Article · Sat Jun 01 04:00:00 EDT 1996 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.362701· OSTI ID:286062

Celliers, P; Da Silva, L B; Dane, C B; Mrowka, S; Norton, M; Harder, J; Hackel, L; Matthews, D L ^[1]; Fiedorowicz, H; Bartnik, A ^[2]; Maldonado, J R ^[3]; Abate, J A ^[4]

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1. Lawrence Livermore National Laboratory, University of California, Livermore, California 94550 (United States)
2. Laser Plasma Interaction Section, Military University of Technology, Institute of Optoelectronics, 01-489 Warsaw 49 (Poland)
3. IBM Microelectronics, Hopewell Junction, New York 12533 (United States)
4. AT&T Bell Laboratories, Murray Hill, New Jersey 07974 (United States)

We measured the conversion efficiency of laser pulse energy into keV x rays from a variety of solid planar targets and a Xe gas puff target irradiated using a high average power Nd:glass slab laser capable of delivering 13 ns full width at half-maximum pulses at up to 20 J at 1.053 {mu}m and 12 J at 0.53 {mu}m. Targets were chosen to optimize emission in the 10{endash}15 A wavelength band, including {ital L}-shell emission from materials with atomic numbers in the range {ital Z}=24{endash}30 and {ital M}-shell emission from Xe ({ital Z}=54). With 1.053 {mu}m a maximum conversion of 11{percent} into 2{pi} sr was measured from solid Xe targets. At 0.527 {mu}m efficiencies of 12{percent}{endash}18{percent}/(2{pi} sr) were measured for all of the solid targets in the same wavelength band. The x-ray conversion efficiency from the Xe gas puff target was considerably lower, at about 3{percent}/(2{pi} sr) when irradiated with 1.053 {mu}m. {copyright} {ital 1996 American Institute of Physics.}

• Research Organization: Lawrence Livermore National Laboratory
• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 286062
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 11 Vol. 79; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
70 PLASMA PHYSICS AND FUSION TECHNOLOGY
EFFICIENCY
EMISSION SPECTRA
L SHELL
LASER-PRODUCED PLASMA
LITHOGRAPHY
M SHELL
OPTIMIZATION
X-RAY SOURCES
XENON