Study of the SiO{sub 2}-Si interface using variable energy positron two-dimensional angular correlation of annihilation radiation

Journal Article · Fri Mar 01 04:00:00 EST 1996 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.76.2157· OSTI ID:284443

Peng, J P; Lynn, K G; Asoka-Kumar, P; Becker, D P ^[1]; Harshman, D R ^[2]

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1. Department of Physics, Brookhaven National Laboratory, Upton, New York 11973 (United States)
2. AT&T Bell Laboratories, Murray Hill, New Jersey 07974 (United States)

The defect structure of the SiO{sub 2}-Si interface has been studied using variable energy positron two-dimensional angular correlation of annihilation radiation (2D-ACAR). As the first depth-resolved 2D-ACAR measurement, unique information about this interface was obtained:The formation and trapping of positronium atoms are observed at the microvoids ({approximately}10 A in size) in the oxide and interface regions. Positron trapping and annihilation at the {ital P}{sub {ital b}} centers in the interface region are inferred. The existence of the microvoids in the interface region is beyond the current interface model, and the results may have a profound impact on the understanding of the interface growth. {copyright} {ital 1996 The American Physical Society.}

• Research Organization: Brookhaven National Laboratory
• DOE Contract Number: AC02-76CH00016
• OSTI ID: 284443
• Journal Information: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 12 Vol. 76; ISSN 0031-9007; ISSN PRLTAO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANGULAR CORRELATION
ANNIHILATION
DEFECT STATES
DEFECTS
INTERFACE STATES
INTERFACES
POSITRON BEAMS
SILICON
SILICON OXIDES
VOIDS