Study of the SiO{sub 2}-Si interface using variable energy positron two-dimensional angular correlation of annihilation radiation
- Department of Physics, Brookhaven National Laboratory, Upton, New York 11973 (United States)
- AT&T Bell Laboratories, Murray Hill, New Jersey 07974 (United States)
The defect structure of the SiO{sub 2}-Si interface has been studied using variable energy positron two-dimensional angular correlation of annihilation radiation (2D-ACAR). As the first depth-resolved 2D-ACAR measurement, unique information about this interface was obtained:The formation and trapping of positronium atoms are observed at the microvoids ({approximately}10 A in size) in the oxide and interface regions. Positron trapping and annihilation at the {ital P}{sub {ital b}} centers in the interface region are inferred. The existence of the microvoids in the interface region is beyond the current interface model, and the results may have a profound impact on the understanding of the interface growth. {copyright} {ital 1996 The American Physical Society.}
- Research Organization:
- Brookhaven National Laboratory
- DOE Contract Number:
- AC02-76CH00016
- OSTI ID:
- 284443
- Journal Information:
- Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 12 Vol. 76; ISSN 0031-9007; ISSN PRLTAO
- Country of Publication:
- United States
- Language:
- English
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